ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,662, issued on Aug. 11, was assigned to BYD Co. Ltd. (Shenzhen, China). "IGBT module, motor controller, and vehicle" was invented by Guangm... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,663, issued on Aug. 11, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,664, issued on Aug. 11, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Transistor arrangement and method for producing a transist... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,665, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,666, issued on Aug. 11, was assigned to STMicroelectronics International N.V. (Geneva). "HEMT device having improved on-state performance a... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,667, issued on Aug. 11, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "High electron mobility transistor with gate ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,668, issued on Aug. 11, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore). "Planar MOSFET with light, regular an... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,669, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "FinFET device structure with ex... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,671, issued on Aug. 11, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINES... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,672, issued on Aug. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method for prod... Read More